Evidence of Be3P2 formation during growth of Be-doped phosphorus-based semiconductor compounds

In this work, we present evidence that Be3P2 microcrystals are formed in Be -doped phosphorus-based semiconductor compounds grown by chemical beam epit axy. Our results suggest that microcrystal formation occurs when high Be co ncentrations (> 10(18) cm(-3)) and temperatures higher than 500 degrees C a re used for crystal growth. The main consequence of Be3P2 formation is a hi gh phosphorus consumption close to these microcrystals that causes a large density of P vacancies in the semiconductor layer. This results in reduced electrical mobility, lattice parameter reduction, and poor crystalinity of the film in general. (c) 1999 American Institute of Physics. [S0003-6951(99 )01624-1].