X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grownon GaAs

Citation
S. Francoeur et al., X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grownon GaAs, APPL PHYS L, 74(24), 1999, pp. 3678-3680
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
24
Year of publication
1999
Pages
3678 - 3680
Database
ISI
SICI code
0003-6951(19990614)74:24<3678:XDSOCO>2.0.ZU;2-L
Abstract
We report on the structural characterization of epitaxial ZnSnP2 grown on G aAs (001). Ordering of Zn and Sn atoms in the cation sublattice is observed by high-resolution x-ray diffraction. By varying the growth conditions, sa mples with two distinct structures were obtained: one showing chalcopyrite ordering with the tetragonal axis oriented along the growth direction and t he other showing no evidence of ordering. Chalcopyrite ordering was determi ned unambiguously by observing several characteristic reflections uniquely identifying this structure. (c) 1999 American Institute of Physics. [S0003- 6951(99)02924-1].