Pulsed-laser-deposited epitaxial Sr2FeMoO6-y thin films: Positive and negative magnetoresistance regimes

Authors
Asano, H Ogale, SB Garrison, J Orozco, A Li, YH Li, E Smolyaninova, V Galley, C Downes, M Rajeswari, M Ramesh, R Venkatesan, T
Citation
H. Asano et al., Pulsed-laser-deposited epitaxial Sr2FeMoO6-y thin films: Positive and negative magnetoresistance regimes, APPL PHYS L, 74(24), 1999, pp. 3696-3698
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
24
Year of publication
1999
Pages
3696 - 3698
Database
ISI
SICI code
0003-6951(19990614)74:24<3696:PESTFP>2.0.ZU;2-1
Abstract
Epitaxial thin films of ordered double-perovskite Sr2FeMoO6-y are deposited on (001) SrTiO3 substrates by pulsed-laser deposition using a two step gro wth process. Selection of growth conditions is found to lead to either high ly conductive metallic thin films (residual resistivity of about 1 mu Omega cm) or semiconducting films. The metallic films show a positive magnetores istance (MR) as high as 35%, while the semiconducting films show a negative MR of -3%, at a temperature of 5 K and a field of 8 T. (C) 1999 American I nstitute of Physics. [S0003-6951(99)03024-7].