All-optical reflection modulator using a nonlinear heteronipi structure within an asymmetric Fabry-Perot optical cavity

Reflectivity changes of similar to 40% and contrast ratios of similar to 10 0% are reported at optical excitation densities less than 100 mu W/cm(2) in an AlAs/AlGaAs/GaAs reflection-mode optical modulator. Switching and in-pl ane transport dynamics as a function of pixel size are also reported. Optic al modulation occurs via the quantum-confined Stark effect in GaAs quantum wells grown within a "nipi" doping superlattice and is controlled through m icrocavity etalon effects. Optical bistability without the need for externa l electronic biasing circuitry is projected. (c) 1999 American Institute of Physics. [S0003-6951(99)03924-8].