A vertical injection blue light emitting diode in substrate separated InGaN heterostructures

Authors
Song, YK Diagne, M Zhou, H Nurmikko, AV Carter-Coman, C Kern, RS Kish, FA Krames, MR
Citation
Yk. Song et al., A vertical injection blue light emitting diode in substrate separated InGaN heterostructures, APPL PHYS L, 74(24), 1999, pp. 3720-3722
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
24
Year of publication
1999
Pages
3720 - 3722
Database
ISI
SICI code
0003-6951(19990614)74:24<3720:AVIBLE>2.0.ZU;2-8
Abstract
A vertical injection, light emitting InGaN quantum well diode has been demo nstrated by separating the nitride heterostructure from its sapphire substr ate by ultraviolet laser photoablation within a process scheme that allows transferring the devices to a host substrate. The incorporation of a dielec tric multilayer stack to the device is shown to be a first practical step t owards a resonant cavity light emitting diode. (C) 1999 American Institute of Physics. [S0003-6951(99)03124-1].