Microscopic 'work function' is evaluated by local tunneling barrier height
(LBH) measurements of clean and Ba-deposited Si(lll) surfaces in order to c
larify the mechanism of work function reduction by Ba deposition. Atomicall
y resolved LBH images are obtained corresponding to scanning tunneling micr
oscopy (STM) images. The difference in the LBH measurement for clean Si(111
)-(7 X 7) and Ba deposited Si(111)-(3 X 1) surfaces agrees with macroscopic
work function reduction due to Ba adsorbate. The result suggests that the
work function is strongly related to the atomic arrangement of the Si(lll)
surface induced by Ba deposition. (C) 1999 Elsevier Science B.V. All rights
reserved.