A field emitter array monolithically integrated with a thin-film transistor on glass for display applications

Authors
Gamo, H Kanemaru, S Itoh, J
Citation
H. Gamo et al., A field emitter array monolithically integrated with a thin-film transistor on glass for display applications, APPL SURF S, 146(1-4), 1999, pp. 187-192
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
146
Issue
1-4
Year of publication
1999
Pages
187 - 192
Database
ISI
SICI code
0169-4332(199905)146:1-4<187:AFEAMI>2.0.ZU;2-W
Abstract
We have fabricated a field emitter array (FEA) monolithically integrated wi th a thin-film-transistor (TFT), called a TFT-FEA, on glass and characteriz ed its emission properties. Fabrication of the TFT-FEA on glass was conduct ed through low-temperature processes of less than 350 degrees C. From exper imental results, it was found that the emission current was well controlled by the TFT drain current and consequently became stable. Emission was also turned on/off by the TFT function at a low voltage of 3 V. With this TFT-F EA, very stable emission currents with fluctuations of less than 2% have be en demonstrated. (C) 1999 Elsevier Science B.V. All rights reserved.