Stable emission from a MOSFET-structured emitter tip in poor vacuum

Authors
Kanemaru, S Hirano, T Honda, K Itoh, J
Citation
S. Kanemaru et al., Stable emission from a MOSFET-structured emitter tip in poor vacuum, APPL SURF S, 146(1-4), 1999, pp. 198-202
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
146
Issue
1-4
Year of publication
1999
Pages
198 - 202
Database
ISI
SICI code
0169-4332(199905)146:1-4<198:SEFAME>2.0.ZU;2-O
Abstract
We report the operation of Metal-Oxide-Silicon Field-Effect-Transistor (MOS FET) structured silicon filed emitters under poor vacuum conditions. The MO SFET-structured field emitter consists of a field emitter tip and a built-i n MOSFET. Measurements in various gases were performed at pressures between 10(-9) and 10(-5) Ton. Emission currents of conventional Si field emitter tips were not stable due to the adsorption of the residual gas and the ion bombardment to the tip. in the MOSFET-structured emitter, the fluctuation o f emission currents in each gas was fully suppressed and the current was ve ry stable. This emitter tip kept stable emission even at pressure of 10(-5) Torr, (C) 1999 Elsevier Science B.V, All rights reserved.