Fabrication and characterization of a nanogap edge emitter with a silicon-on-insulator wafer

Si thin-film edge emitters with various gaps ranging from 15 nm to 55 nm we re fabricated and characterized. Smooth, straight nanometer-scale gaps were made on a silicon-on-insulator wafer by using advanced microfabrication te chnology based on electron beam lithography, dry etching, and thermal oxida tion. Electron emission occurred from voltage around 60 V and reached 100 n A at 70 V. The emission characteristics show no clear dependence on the gap distance. Measurements were also done in air to evaluate current leakage t hrough nanogaps. Fabrication, structure, and emission characteristics are d escribed in detail. (C) 1999 Elsevier Science B.V. All rights reserved.