Atomic level analysis of electron emitter surfaces by the scanning atom probe

Citation
O. Nishikawa et al., Atomic level analysis of electron emitter surfaces by the scanning atom probe, APPL SURF S, 146(1-4), 1999, pp. 398-407
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
146
Issue
1-4
Year of publication
1999
Pages
398 - 407
Database
ISI
SICI code
0169-4332(199905)146:1-4<398:ALAOEE>2.0.ZU;2-R
Abstract
Fine grains of chemical vapor deposition (CVD) diamonds and silicon tip ape xes of a microtip array are mass-analyzed at atomic dimension by a scanning atom probe (SAP). The study revealed that the CVD diamonds contain a large amount of hydrogen, which is field-evaporated as carbon-hydrogen cluster i ons, Some hydrogen atoms are weakly bound with the carbon-hydrogen clusters by hydrogen bonding and are released from the clusters while flying from t he diamond surface to the detector. The depth profile of the hydrogen distr ibution indicates that hydrogen concentration decreases logarithmically wit h depth. The analysis of the silicon tip apex also revealed that the tip ap ex contains a significant amount of carbon and hydrogen. The silicon-carbon ratio of the uppermost surface layer is as high as 1:1 and rapidly decreas es with depth and approaches nearly 2% at a depth of 20 nm. This suggests t hat the carbon might be intermixed or absorbed during the fabrication and/o r dry etching process of the microtip array. (C) 1999 Elsevier Science B.V. All rights reserved.