Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors

Authors
Danelon, V Aniel, F Benchimol, JL Mba, J Riet, M Crozat, P Vernet, G Adde, R
Citation
V. Danelon et al., Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors, IEEE MICR G, 9(5), 1999, pp. 195-197
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
9
Issue
5
Year of publication
1999
Pages
195 - 197
Database
ISI
SICI code
1051-8207(199905)9:5<195:NPOIDH>2.0.ZU;2-6
Abstract
The noise performances of a new base-collector self-aligned technology of d ouble-heterojunction single-finger InGaAs/InP bipolar transistor are invest igated at 300K, Noise parameter variations are studied versus frequency in the 2-18 GHz range, versus collector current and emitter area, A low minimu m noise figure F-min = 0.6 dB is demonstrated at 2 GHz with a 4.8-mu m(2) e mitter. Variations of F-min show a minimum versus collector current. The hi gh cutoff frequencies of the devices limit the increase of F-min, versus fr equency.