Tertiarybutylhydrazine: a new precursor for the MOVPE of Group III-nitrides

Authors
Pohl, UW Moller, C Knorr, K Richter, W Gottfriedsen, J Schumann, H Rademann, K Fielicke, A
Citation
Uw. Pohl et al., Tertiarybutylhydrazine: a new precursor for the MOVPE of Group III-nitrides, MAT SCI E B, 59(1-3), 1999, pp. 20-23
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
59
Issue
1-3
Year of publication
1999
Pages
20 - 23
Database
ISI
SICI code
0921-5107(19990506)59:1-3<20:TANPFT>2.0.ZU;2-L
Abstract
Tertiarybutylhydrazine (tBuHy), generated from tBuMy hydrocloride, was foun d to have a convenient vapor pressure (6.7 mbar at 20 degrees C) for MOVPE applications. Thermolysis of tBuHy, studied by quadrupole mass spectroscopy (QMS), starts at about 220 degrees C by homolytic cleavage into reactive t BuNH and NH, radicals. Almost complete decomposition under QMS conditions i s observed above 350 degrees C. Mirror-like GaN epilayers with mixed cubic/ hexagonal and hexagonal structure were grown on GaAs and Al2O3 substrates, respectively, at 670 degrees C using tBuHy and Me3Ga or Et,Ga with a V/III ratio of 70. Low carbon incorporation was found in tBuHy-grown layers with respect to layers grown with Me(2)Hy under the same conditions. (C) 1999 El sevier Science S.A. All rights reserved.