Dp. Bour et al., MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes, MAT SCI E B, 59(1-3), 1999, pp. 33-38
We demonstrate room temperature, pulsed, current-injected operation of InGa
AlN heterostructure laser diodes with mirrors fabricated by chemically assi
sted ion beam etching. The multiple quantum well devices were grown by orga
no-metallic vapor phase epitaxy on c-face sapphire substrates. The emission
wavelengths of the gain-guided laser diodes were similar to 400 nm. The lo
west threshold current density obtained was 6 kA cm(-2) with maximum output
powers of 50 mW per facet. Optically-pumped distributed-feedback laser ope
ration was also achieved. (C) 1999 Elsevier Science S.A. All rights reserve
d.