MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

Authors
Bour, DP Kneissl, M Hofstetter, D Romano, LT McCluskey, M Van de Walle, CG Krusor, BS Dunnrowicz, C Donaldson, R Walker, J Johnson, NM
Citation
Dp. Bour et al., MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes, MAT SCI E B, 59(1-3), 1999, pp. 33-38
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
59
Issue
1-3
Year of publication
1999
Pages
33 - 38
Database
ISI
SICI code
0921-5107(19990506)59:1-3<33:MGACOA>2.0.ZU;2-U
Abstract
We demonstrate room temperature, pulsed, current-injected operation of InGa AlN heterostructure laser diodes with mirrors fabricated by chemically assi sted ion beam etching. The multiple quantum well devices were grown by orga no-metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were similar to 400 nm. The lo west threshold current density obtained was 6 kA cm(-2) with maximum output powers of 50 mW per facet. Optically-pumped distributed-feedback laser ope ration was also achieved. (C) 1999 Elsevier Science S.A. All rights reserve d.