MBE GaN grown on (101) NdGaO3 substrates

Authors
Mamutin, VV Toropov, AA Kartenko, NF Ivanov, SV Wagner, A Monemar, B
Citation
Vv. Mamutin et al., MBE GaN grown on (101) NdGaO3 substrates, MAT SCI E B, 59(1-3), 1999, pp. 56-59
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
59
Issue
1-3
Year of publication
1999
Pages
56 - 59
Database
ISI
SICI code
0921-5107(19990506)59:1-3<56:MGGO(N>2.0.ZU;2-2
Abstract
We investigate the structure, morphology and optical properties of gallium nitride (GaN) films deposited on (101) neodium gallate (NdGaO3) substrates by molecular beam epitaxy. Scanning electron microscopy, X-ray diffraction, photoluminescence and capacity-voltage measurements are used for the films characterization. Comparison of the GaN/NdGaO3 layer properties with those of GaN films grown on (0001) sapphire substrates has revealed the higher l uminescence efficiency of the former. (C) 1999 Elsevier Science S.A. All ri ghts reserved.