Citation
K. Kushi et al., High speed growth of device quality GaN and InGaN by RF-MBE, MAT SCI E B, 59(1-3), 1999, pp. 65-68
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
59
Issue
1-3
Year of publication
1999
Pages
65 - 68
Database
ISI
SICI code
0921-5107(19990506)59:1-3<65:HSGODQ>2.0.ZU;2-K
Abstract
A high-speed growth (1.2-1.4 mu m h(-1)) of device-quality GaN epitaxial la
yers was demonstrated by molecular beam epitaxy using RF radical nitrogen (
RF-MBE). The migration enhanced epitaxy (MEE) growth of GaN was investigate
d. For undoped GaN, the room temperature (RT) PL-FWHM of 31 meV and the res
idual carrier density of 2.6 x 10(16) cm(-3) were obtained. The light emitt
ing diode (LED) structures with InGaN/GaN MQW active layers were grown with
a growth rate of 1.33 mu m h(-1). Green (567 nm) to blue (460 nm) range em
issions were observed at RT under current injection. (C) 1999 Elsevier Scie
nce S.A. All rights reserved.