Citation
S. Shokhovets et al., Optical characterisation of interface properties for hexagonal GaN grown by MBE on GaAs, MAT SCI E B, 59(1-3), 1999, pp. 69-72
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
59
Issue
1-3
Year of publication
1999
Pages
69 - 72
Database
ISI
SICI code
0921-5107(19990506)59:1-3<69:OCOIPF>2.0.ZU;2-E
Abstract
A new optical method for the characterisation of substrate/film interface p
roperties of GaN grown on GaAs is presented. It is based on reflectivity me
asurements over an extended spectral range. The influence of surface roughn
ess is separated by a comparison of the experimental data with calculations
for a smooth film above the band gap of GaN, while at lower energies, the
deviations from the calculated one-layer behaviour (without interface) are
strongly correlated to the effective refractive index of the interface n(in
t) and its thickness. It is shown that for GaAs substrates under certain MB
E growth conditions, n(int) is mainly determined by the void fraction. (C)
1999 Elsevier Science S.A. All rights reserved.