Highly textured hexagonal AlN films deposited at low temperature by reactive cathodic sputerring

All AIN films deposited from 300 to 700 degrees C on silica, Si(100) and Si (111) substrates exhibit (00.2) and (10.1) preferential orientations. We ob tain the highest degree of preferential alignment of the (0001) planes of A lN on silica substrates reported to date for a deposition temperature of 35 0 degrees C. In this 'low' temperature range, the multiple of random densit y values (mrd-values) have a low dependence on the nature and orientation o f the substrates. At 700 degrees C, we obtain a mrd-value of 165 on Si(111) with additionally a significant in plane orientation. As T increases in th is 'mean' temperature range (> 350 degrees C), crystalline substrates, then the fit of the symmetry of the substrate surface with that of the growing film gives increasing mrd-values. (C) 1999 Elsevier Science S.A. All rights reserved.