Influence of strain and buffer layer type on In incorporation during GaInNMOVPE

We have studied the growth behaviour of GaN by metalorganic vapor phase epi taxy on various buffer layers. GaInN grown on high quality GaN buffers is c oherently strained up to a thickness of similar to 100 nm. When grown on Al GaN, the strain remains unchanged up Co a critical Al content, above which relaxation was observed. In parallel, the In content increased significantl y. When grown on lower quality GaN, the strain in our GaInN layers also rel axed and the In content increased. Therefore, we suggested a relation betwe en In incorporation efficiency and defect structure on the growing epilayer surface. (C) 1999 Elsevier Science S.A. All rights reserved.