A tunable blue light emission of InGaN GaN quantum well through thermal interdiffusion

Authors
Chan, MCY Cheung, EMT Li, EH
Citation
Mcy. Chan et al., A tunable blue light emission of InGaN GaN quantum well through thermal interdiffusion, MAT SCI E B, 59(1-3), 1999, pp. 283-287
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
59
Issue
1-3
Year of publication
1999
Pages
283 - 287
Database
ISI
SICI code
0921-5107(19990506)59:1-3<283:ATBLEO>2.0.ZU;2-9
Abstract
In recent years, blue light emitting diodes and lasers of III-nitride semic onductors have been of much interest. This is mainly due to its large bandg ap ranging from 1.89 eV (wurtzite InN) to 3.42 eV (wurtzite GaN). InGaN/GaN quantum well (QW) structures have been used to achieve high lumens blue LE Ds. Tn this paper, InGaN/GaN QW intermixing structure is theoretically anal yzed and is used to optimize and tune the optical emission. (C) 1999 Publis hed by Elsevier Science S.A. All rights reserved.