Fabrication and photoluminescence of GaN sapphire submicron-scale structures with nanometre scale resolution

Authors
Ribayrol, A Coquillat, D De la Rue, RM Murad, SK Wilkinson, CDW Girard, P Briot, O Aulombard, RL
Citation
A. Ribayrol et al., Fabrication and photoluminescence of GaN sapphire submicron-scale structures with nanometre scale resolution, MAT SCI E B, 59(1-3), 1999, pp. 335-339
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
59
Issue
1-3
Year of publication
1999
Pages
335 - 339
Database
ISI
SICI code
0921-5107(19990506)59:1-3<335:FAPOGS>2.0.ZU;2-#
Abstract
We report the fabrication of submicon-scale structures using high resolutio n etching to transfer patterns from PMMA into GaN with an intermediate mask consisting of a bilayer of titanium and SiNx. Atomic force microscopy meas urements showed the high quality of the structures etched in CH4/H-2 as wel l as an erosion of the mask. The low temperature photoluminescence measured on the etched structures was almost as strong as that from the unetched su rface. (C) 1999 Elsevier Science S.A. All rights reserved.