Ion beam sputter etching of galliumnitride grown by chloride transport LP-CVD

Authors
Topf, M Cavas, F Meyer, BK Kempf, B Betz, W Veit, P
Citation
M. Topf et al., Ion beam sputter etching of galliumnitride grown by chloride transport LP-CVD, MAT SCI E B, 59(1-3), 1999, pp. 345-349
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
59
Issue
1-3
Year of publication
1999
Pages
345 - 349
Database
ISI
SICI code
0921-5107(19990506)59:1-3<345:IBSEOG>2.0.ZU;2-8
Abstract
Galliumnitrid (GaN) layers, grown by chloride transport LP-CVD, were etched by ion beam sputtering with carbon dioxide (CO2). Before etching all sampl es were masked by electron beam evaporated titanium. We report on the depen dence of the etch rate on the angle of incidence of the ion beam. Furthermo re we present structural examinations of the surface before and after ion e tching as well as an analysis of masking effects. Surface roughening and st ructural defects were investigated by optical microscopy, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). (C) 1999 Else vier Science S.A. All rights reserved.