Smooth GaN surfaces by photoinduced electro-chemical etching

Authors
Rotter, T Aderhold, J Mistele, D Semchinova, O Stemmer, J Uffmann, D Graul, J
Citation
T. Rotter et al., Smooth GaN surfaces by photoinduced electro-chemical etching, MAT SCI E B, 59(1-3), 1999, pp. 350-354
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
59
Issue
1-3
Year of publication
1999
Pages
350 - 354
Database
ISI
SICI code
0921-5107(19990506)59:1-3<350:SGSBPE>2.0.ZU;2-#
Abstract
We have etched n-GaN grown both by plasma assisted MBE and MOCVD in 0.5 M K OH under HeCd-laser illumination (110 mW cm(-2)) and controlled the photocu rrent by an external voltage source. The reproducible etch depths were line ar with respect to the charge. The examination of the dissolution potential revealed strong dependence on illumination and current. Thereby, regimes t o obtain smoothly etched surfaces were found at low dissolution potentials. Demonstration of the possibilities in photoelectrochemical (PEC) etching a re given. (C) 1999 Elsevier Science S.A. All rights reserved.