GaN-based laser diode with focused ion beam-etched mirrors

Authors
Ambe, C Takeuchi, T Katoh, H Isomura, K Satoh, T Mizumoto, R Yamaguchi, S Wetzel, C Amano, H Akasaki, I Kaneko, Y Yamada, N
Citation
C. Ambe et al., GaN-based laser diode with focused ion beam-etched mirrors, MAT SCI E B, 59(1-3), 1999, pp. 382-385
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
59
Issue
1-3
Year of publication
1999
Pages
382 - 385
Database
ISI
SICI code
0921-5107(19990506)59:1-3<382:GLDWFI>2.0.ZU;2-9
Abstract
GaN-based MQWs-SCH laser diodes (LDs) with Fabry-Perot resonator mirrors fa bricated by focused ion beam (FIB) etching were demonstrated for the first time. The diodes show lasing by pulsed current injection at room temperatur e with a lasing wavelength near 410 nm. FIB etching of the mirrors signific antly reduced the threshold current from 1.25 to 0.75 A. In addition we stu died the dependence of I-L characteristics on the successive rotation of th e etched mirror of a single device and found a strong angular dependence. A similar study of the tilting angle revealed a very weak variation. (C) 199 9 Published by Elsevier Science S.A. All rights reserved.