The laser operation of GaInN/GaN distributed feedback lasers (DFB) with sep
arate confinement double hetero or multi quantum well structures on SiC is
demonstrated. The separate confinement heterostructures were realized by ov
ergrowing the dry etched DFB gratings. Optically excited lasing is observed
with emission wavelengths between 402 and 421 nm, depending linearly on th
e grating period. The laser thresholds are compared to laser thresholds of
non overgrown DFB lasers. Furthermore, the wavelengths selectivity of DFB l
asers is used to study vertical modes in laser structures grown on sapphire
. In a thick asymmetric laser structure, higher vertical modes can be disti
nguished because of their different effective refractive index eta(eff). In
thin heterostructures. the vertical ground mode is lasing. (C) 1999 Elsevi
er Science S.A. All rights reserved.