Features and applications of FeRAM

Authors
Toyoshima, H Kobatake, H
Citation
H. Toyoshima et H. Kobatake, Features and applications of FeRAM, NEC RES DEV, 40(2), 1999, pp. 206-209
Citations number
14
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
NEC RESEARCH & DEVELOPMENT
ISSN journal
0547051X → ACNP
Volume
40
Issue
2
Year of publication
1999
Pages
206 - 209
Database
ISI
SICI code
0547-051X(199904)40:2<206:FAAOF>2.0.ZU;2-F
Abstract
Ferroelectric random access memory (FeRAM) offers nonvolatile data storage, low-voltage operation, and fast write speeds. The fundamental FeRAM struct ure; and operations are reviewed. The features of FeRAM are compared with t hose of conventional memories and shown to be attractive for many types of portable electronic devices.