Degradation mechanism of PZT caused by H-2 annealing

Citation
N. Ikarashi et al., Degradation mechanism of PZT caused by H-2 annealing, NEC RES DEV, 40(2), 1999, pp. 219-222
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
NEC RESEARCH & DEVELOPMENT
ISSN journal
0547051X → ACNP
Volume
40
Issue
2
Year of publication
1999
Pages
219 - 222
Database
ISI
SICI code
0547-051X(199904)40:2<219:DMOPCB>2.0.ZU;2-R
Abstract
Changes in the crystal structure of Pb(Zr,Ti)O-3 (PZT) on a Pt electrode ca used by annealing in hydrogen-containing ambient were studied. Transmission electron microscopy combined with nano-scale analytical techniques (energy dispersive x-ray spectroscopy and electron energy-loss spectroscopy) revea led that a decrease in Pb composition and distortion in Ti-O coordination o ccurred at the PZT/Pt interface. These findings indicate that preferential reduction of Pb and its sequential diffusion from the PZT to the Pt electro de play an important role in the changes of the PZT crystal. Thus, the chan ges in crystal structure due to annealing in a hydrogen-containing ambient can be avoided by using electrode materials that prevent Pb diffusion.