THE EFFECTS OF HIGH-PRESSURE ON CARBON NITRIDE - IN-SITU MEASUREMENTSOF MICRO PHOTOLUMINESCENCE AND INFRARED-SPECTRA

Citation
J. Zhao et al., THE EFFECTS OF HIGH-PRESSURE ON CARBON NITRIDE - IN-SITU MEASUREMENTSOF MICRO PHOTOLUMINESCENCE AND INFRARED-SPECTRA, Applied physics letters, 70(21), 1997, pp. 2781-2783
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
70
Issue
21
Year of publication
1997
Pages
2781 - 2783
Database
ISI
SICI code
0003-6951(1997)70:21<2781:TEOHOC>2.0.ZU;2-G
Abstract
The effects of high pressure up to 24 GPa on carbon nitride were studi ed using in situ micro photoluminescence (PL) and infrared (IR) absorp tion measurements at room temperature. The experiments indicate pressu re-induced PL quenching with pressure increasing from 0 to 7 Gpa, but the PL remains unchanged from 7 to 24 GPa. The PL results display the pressure effect of PL enhancement after release of pressure to ambient atmosphere. The IR absorption bands broaden toward low frequency afte r release of pressure. These may be explained by using the PL model of undistorted sp(2) clusters, which, as PL centers, undergo distortion under pressure and pressure-induced local atomic rearrangement in the sample. (C) 1997 American Institute of Physics.