BIAXIALLY ALIGNED BUFFER LAYERS OF CERIUM OXIDE, YTTRIA-STABILIZED ZIRCONIA, AND THEIR BILAYERS

Biaxially aligned cerium oxide (CeO2) and yttria stabilized zirconia ( YSZ) films were deposited on Ni-based metal (Hastelloy C276) substrate s held at room temperature using ion beam assisted (IBAD) magnetron de position with the ion beam directed at 55 degrees to the normal of the film plane. Ln addition, we achieved, room-temperature epitaxial grow th of CeO2 by bias sputtering to form biaxially aligned CeO2/YSZ bilay ers. The crystalline structure and in-plane orientation of films was i nvestigated by x-ray diffraction techniques. Both the IBAD CeO2 and YS Z films, and the CeO2/YSZ bilayers have a (111) pole in the ion beam d irection. (C) 1997 American Institute of Physics.