EFFECTS OF IN-SITU DOPING FROM B2H6 AND PH3 ON HYDROGEN DESORPTION AND THE LOW-TEMPERATURE GROWTH MODE OF SI ON SI(100) BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

We demonstrate that di- and monohydride desorption peak temperatures a re shifted lower for baron-doped films and higher for phosphorus-doped films compared to intrinsic Si(100). This observation is exploited to show that the shifts in di- and monohydride desorption peak temperatu res with doping are accompanied by shifts in the growth mode transitio n temperatures, with one exception which is discussed. This work sugge sts that dihydrides lead to breakdown of epitaxial growth while monohy drides promote three-dimensional epitaxial growth. (C) 1997 American I nstitute of Physics.