THERMODYNAMIC CONSIDERATIONS IN EPITAXIAL-GROWTH OF GAAS1-XNX SOLID-SOLUTIONS

Citation
Y. Qiu et al., THERMODYNAMIC CONSIDERATIONS IN EPITAXIAL-GROWTH OF GAAS1-XNX SOLID-SOLUTIONS, Applied physics letters, 70(21), 1997, pp. 2831-2833
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
70
Issue
21
Year of publication
1997
Pages
2831 - 2833
Database
ISI
SICI code
0003-6951(1997)70:21<2831:TCIEOG>2.0.ZU;2-2
Abstract
We describe epitaxial growth of solid solutions of GaAs1-xNx with high nitrogen concentrations. The equilibrium constants of reactions neede d for the formation of single phase alloys are calculated and compared with experimental pressure and growth temperature data. We show good agreement between the experiment and the calculated thermodynamic grow th conditions. in addition, our calculations indicate that at room tem perature the alloys of GaAs1-xNx are either unstable or metastable wit h respect to decomposition, for the entire range of compositions. (C) 1997 American Institute of Physics.