We describe epitaxial growth of solid solutions of GaAs1-xNx with high
nitrogen concentrations. The equilibrium constants of reactions neede
d for the formation of single phase alloys are calculated and compared
with experimental pressure and growth temperature data. We show good
agreement between the experiment and the calculated thermodynamic grow
th conditions. in addition, our calculations indicate that at room tem
perature the alloys of GaAs1-xNx are either unstable or metastable wit
h respect to decomposition, for the entire range of compositions. (C)
1997 American Institute of Physics.