THE FORMATION OF NANOSTRUCTURES ON SILICON SURFACES IN THE PRESENCE OF HYDROGEN

Authors
TESCHKE O SOARES DM NUNES LAO
Citation
O. Teschke et al., THE FORMATION OF NANOSTRUCTURES ON SILICON SURFACES IN THE PRESENCE OF HYDROGEN, Applied physics letters, 70(21), 1997, pp. 2840-2842
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
21
Year of publication
1997
Pages
2840 - 2842
Database
ISI
SICI code
0003-6951(1997)70:21<2840:TFONOS>2.0.ZU;2-X
Abstract
The presence of hydrogen in HF solutions at a silicon substrate surfac e is shown to be sufficient to produce a photoluminescent porous silic on layer. The photoluminescence measurements of bubbled and anodized s amples show similar spectra when illuminated with UV radiation. This i s strong evidence that the hydrogen produced by the anodic silicon dis solution reaction is also responsible for the formation of nanostructu res. (C) 1997 American Institute of Physics.