ENHANCED ELECTROABSORPTION IN TENSILE-STRAINED GAYIN1-YAS ALXIN1-XAS/INP QUANTUM-WELL STRUCTURES, DUE TO FIELD-INDUCED MERGING OF LIGHT-HOLE AND HEAVY-HOLE TRANSITIONS/

Authors
SCHWANDER T ANHEGGER M BURGER N FEIFEL T HIRCHE K KORN M PANZLAFF K SCHROTER S WARTH M KONIG P HANGLEITER A
Citation
T. Schwander et al., ENHANCED ELECTROABSORPTION IN TENSILE-STRAINED GAYIN1-YAS ALXIN1-XAS/INP QUANTUM-WELL STRUCTURES, DUE TO FIELD-INDUCED MERGING OF LIGHT-HOLE AND HEAVY-HOLE TRANSITIONS/, Applied physics letters, 70(21), 1997, pp. 2855-2857
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
21
Year of publication
1997
Pages
2855 - 2857
Database
ISI
SICI code
0003-6951(1997)70:21<2855:EEITGA>2.0.ZU;2-J
Abstract
Enhanced electroabsorption, due to held-induced degeneration of light- hole and heavy-hole states, is found in tensile-strained Ga0.53In0.47A s quantum wells with Al0.48In0.52As barriers. This behavior seems to b e specific for the AlGaInAs material system, where the Stark shift is dominated by heavy holes rather than by electrons. The effect, predict ed theoretically by band structure calculations, is verified by differ ential electrotransmission experiments at 300 and 77 K. (C) 1997 Ameri can Institute of Physics.