METAL-ORGANIC VAPOR-PHASE EPITAXY GROWTH OF GAASN ON GAAS USING DIMETHYLHYDRAZINE AND TERTIARYBUTYLARSINE

GaAsN layers with good structural quality and surface morphology have been successfully grown on a GaAs substrate using atmospheric pressure metal organic vapor phase epitaxy. A new combination of precursors na mely, dimethylhydrazine for nitrogen and tertiarybutylarsine instead o f conventional arsine for arsenic, greatly facilitated growths at temp eratures as low as 500 degrees C. Layers with N content as high as 3% and corresponding to room temperature photoluminescence (PL) peak wave length of 1.17 mu m (1.064 eV) have been obtained. (C) 1997 American I nstitute of Physics.