REAL-SPACE TRANSFER IN A VELOCITY MODULATED TRANSISTOR STRUCTURE

We report experimental, room temperature data showing real space trans fer in a heterostructure which can support the movement of electrons o ver a barrier in both directions between two channels. Real space tran sfer occurs between two channels connected in parallel in a three-gate transistor, which has been developed to interrogate the channel popul ations, Results are presented that demonstrate real space transfer in a heterostructure which features a 2.5:1 mobility ratio between channe ls. This heterostructure is designed for use in a velocity modulation transistor, which requires reciprocal, gate-assisted transfer between two channels of differing mobilities. (C) 1997 American Institute of P hysics.