MANY-BODY EFFECTS ON MODULATION-DOPED INAS GAAS QUANTUM DOTS/

Authors
LEE JI LEE HG SHIN EJ YU S KIM D IHM G
Citation
Ji. Lee et al., MANY-BODY EFFECTS ON MODULATION-DOPED INAS GAAS QUANTUM DOTS/, Applied physics letters, 70(21), 1997, pp. 2885-2887
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
21
Year of publication
1997
Pages
2885 - 2887
Database
ISI
SICI code
0003-6951(1997)70:21<2885:MEOMIG>2.0.ZU;2-Y
Abstract
The excitation intensity dependent photoluminescence spectra of variou s modulation-doped InAs/GaAs quantum dots exhibit the band filling and band-gap renormalization. From the time-resolved photoluminescence sp ectra, in addition to the interaction of the carriers in quantum dots with the remote ionized impurities in a GaAs barrier, the screening du e to the two-dimensional charges is found to mainly affect the carrier lifetime in the modulation-doped quantum dots. (C) 1997 American Inst itute of Physics.