Aberration compensation in charged particle projection lithography

Citation
Xq. Zhu et al., Aberration compensation in charged particle projection lithography, NUCL INST A, 427(1-2), 1999, pp. 292-298
Citations number
8
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
427
Issue
1-2
Year of publication
1999
Pages
292 - 298
Database
ISI
SICI code
0168-9002(19990511)427:1-2<292:ACICPP>2.0.ZU;2-G
Abstract
Projection systems offer the opportunity to increase the throughput for cha rged particle lithography, because such systems image a large area of a mas k directly on to a wafer as a single shot. Shots have to be imaged over a c ertain range of off-axis distances at the wafer to increase the writing spe ed, because shot sizes are limited to about 0.25 x 0.25 mm(2) due to aberra tions. In a projection system with only lenses, however, the aberrations fo r off-axis shots are still very large, and some aberration compensation ele ments need to be introduced. In this paper, three aberration compensation e lements (deflectors, stigmators and dynamic focus lenses) are first discuss ed, a suite of newly developed software, called PROJECTION, based on this p rinciple and our unified aberration theory [2,3] is then described, and an illustrative example computed with the software is finally given. (C) 1999 Published by Elsevier Science B.V. All rights reserved.