Characterization of Ar+ irradiated ZrO2-Y2O3 films on different substrate materials

Zirconia-yttria films containing 7.0 wt% Y2O3 were prepared on silicon or i ron substrate by r.f, magnetron sputtering deposition followed by 40 keV Ar + ion irradiation at room temperature. The characterization of the zirconia -yttria film phase structure was carried out by X-ray diffraction (XRD) and Raman spectroscopy. It is found that the zirconia-yttria films deposited b y r.f. magnetron sputtering on silicon substrate were amorphous, while mono clinic and cubic phases appeared for the films prepared by the same deposit ion method on iron substrate. Also films grown on the different substrates and exposed to Ar+ irradiation, exhibited different phase transformation be havior. (C) 1999 Elsevier Science B.V. All rights reserved.