Resonant electron tunneling in single quantum well heterostructure junction of electrodeposited metal semiconductor nanostructures using nuclear track filters

We report on resonant electron tunneling through a Cu-Se heterostructure ju nction grown electrochemically in the submicron size pores (0.8 mu m) of a nuclear track filter (Polycarbonate). The prominent feature of negative dif ferential resistance (NDR) has been observed in the current-voltage (I-V) c haracteristic of the so-fabricated array of resonant tunneling diodes (RTDs ) even at room temperature, along with a significant peak to valley current ratio (2.5) of the resonance. Tunneling structures of the nanofabricated R TDs around zero bias are also observed at room temperature. Our results sho w that the low cost and relatively easy electrodeposition method can be a v ery effective way to prepare resonant quantum tunneling devices, using the pores of nuclear track filters. (C) 1999 Elsevier Science B.V. All rights r eserved.