Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen in ZnS0.06Se0.94

We show that quantitative information on the electrical deactivation of dop ing can be obtained by combining the results of positron annihilation, seco ndary ion-mass spectrometry, and capacitance-voltage measurements. By apply ing this method to study the N doping of ZnS0.06Se0.94, we can conclude tha t the fraction of electrically inactive nitrogen may vary from 0% to 80%, d epending strongly on the growth conditions. About 40% of the electrically a ctive N exist in the isolated acceptor configuration N-Se(-) and another 40 % is bound to compensating donors, most probably to (ZniNSe)(1+) and (VSeNS e)(1+) pairs. Typically 20% forms negative (VSeNSe)(1-) complexes with the Se vacancy. [S0163-1829(99)50620-6].