Disorder, defects, and optical absorption in a-Si and a-Si : H

Citation
S. Knief et W. Von Niessen, Disorder, defects, and optical absorption in a-Si and a-Si : H, PHYS REV B, 59(20), 1999, pp. 12940-12946
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
20
Year of publication
1999
Pages
12940 - 12946
Database
ISI
SICI code
0163-1829(19990515)59:20<12940:DDAOAI>2.0.ZU;2-Y
Abstract
In this paper we present the optical properties of various structural model s for a-Si and a-Si:H. We discuss how topological disorder, hydrogen conten t, and different types of defects (dangling bonds and floating bonds) influ ence the shape of the optical-absorption spectrum and the position of the U rbach edge. The absorption behavior is characterized by the joint density o f states. The band gaps are obtained via the Tauc plot. The principal struc ture of the optical absorption spectrum is determined mainly by the degree of topological disorder and the amount of hydrogen. The presence of defects gives rise to tail absorption. Dangling bonds affect the optical propertie s more than floating bonds do. [S0163-1829(99)08319-8].