Structure determination of the (root 3 x root 3) R30 degrees boron phase on the Si(111) surface using photoelectron diffraction

Authors
Baumgartel, P Paggel, JJ Hasselblatt, M Horn, K Fernandez, V Schaff, O Weaver, JH Bradshaw, AM Woodruff, DP Rotenberg, E Denlinger, J
Citation
P. Baumgartel et al., Structure determination of the (root 3 x root 3) R30 degrees boron phase on the Si(111) surface using photoelectron diffraction, PHYS REV B, 59(20), 1999, pp. 13014-13019
Citations number
47
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
20
Year of publication
1999
Pages
13014 - 13019
Database
ISI
SICI code
0163-1829(19990515)59:20<13014:SDOT(3>2.0.ZU;2-K
Abstract
A quantitative structural analysis of the system Si(lll)(root 3 X root 3)R3 0 degrees-B has been performed using photo-electron diffraction in the scan ned energy mode. We confirm that the substitutional Sg adsorption site is o ccupied and show that the interatomic separations to the three nearest-neig hbor Si atoms are 1.98(+/-0.04) Angstrom, 2.14(+/-0.13) Angstrom,and 2.21(/-0.12) Angstrom. These correspond to the silicon atom immediately below th e boron atom, the adatom immediately above, and the three atoms to which it is coordinated symmetrically in the first layer. [S0163-1829(99)05819-1].