Structure determination of the indium-induced Si(111)-(4 x 1) reconstruction by surface x-ray diffraction

Authors
Bunk, O Falkenberg, G Zeysing, JH Lottermoser, L Johnson, RL Nielsen, M Berg-Rasmussen, F Baker, J Feidenhans'l, R
Citation
O. Bunk et al., Structure determination of the indium-induced Si(111)-(4 x 1) reconstruction by surface x-ray diffraction, PHYS REV B, 59(19), 1999, pp. 12228-12231
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
19
Year of publication
1999
Pages
12228 - 12231
Database
ISI
SICI code
0163-1829(19990515)59:19<12228:SDOTIS>2.0.ZU;2-P
Abstract
A detailed structural model for the indium-induced Si(111)-(4 x 1) surface reconstruction has been determined by analyzing an extensive set of x-ray-d iffraction data recorded with monochromatic (h omega=9.1 keV) synchrotron r adiation. The reconstruction is quasi-one-dimensional. The main features in the structure are chains of silicon atoms alternating with zigzag chains o f indium atoms on top of an essentially unperturbed silicon lattice. The in dium coverage corresponds to one monolayer. The structural model consistent ly explains all previously published experimental data. [S0163-1829(99)0841 9-2].