Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate

Authors
Zou, J Liao, XZ Cockayne, DJH Leon, R
Citation
J. Zou et al., Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate, PHYS REV B, 59(19), 1999, pp. 12279-12282
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
19
Year of publication
1999
Pages
12279 - 12282
Database
ISI
SICI code
0163-1829(19990515)59:19<12279:TEMSOI>2.0.ZU;2-Y
Abstract
A transmission electron microscopy (TEM) investigation of the morphology of InxGa1-xAs quantum dots grown on a GaAs(001) substrate has been carried ou t. The size and the shape of the quantum dots have been determined using br ight-field images of cross-section TEM specimens and [001] on-zone bright-f ield images with imaging simulation from plan-view TEM specimens. The resul ts suggest that the coherent quantum dots are lens shaped with base diamete rs of 25-40 nm and aspect ratios of height to diameter of 1:6-1:4. [S0163-1 829(99)00920-0].