Tuning band offsets at the AlAs GaAs interface by group-IV intralayer deposition

Authors
Miwa, RH Ferraz, AC
Citation
Rh. Miwa et Ac. Ferraz, Tuning band offsets at the AlAs GaAs interface by group-IV intralayer deposition, PHYS REV B, 59(19), 1999, pp. 12499-12504
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
19
Year of publication
1999
Pages
12499 - 12504
Database
ISI
SICI code
0163-1829(19990515)59:19<12499:TBOATA>2.0.ZU;2-W
Abstract
We have investigated the electronic properties of AlAs/Si(Ge)/GaAs and GaAs /Si(Ge)/AlAs (001) interfaces, employing first-principles total-energy calc ulations. Our results reveal that the decrease or increase of the valence-b and offset can be attributed to the segregation of Si or Ge atoms toward Al As or GaAs layers. The segregation gives rise to an asymmetrical distributi on of Si or Ge atoms at the AlAs/GaAs interface. [S0163-1829(99)01320-X].