Spin-dependent tunneling in double-barrier semiconductor heterostructures

Spin-dependent tunneling in symmetric and asymmetric double-barrier semicon ductor heterostructures is studied. The effective one-band Hamiltonian appr oximation and spin-dependent boundary conditions approach an used for a the oretical investigation of the influence of electron spin on the tunneling p robability. It is shown that spin-orbit splitting in the dispersion relatio n for electrons in A(III)B(V) semiconductors can provide the dependence of the tunneling transmission probability on the electron-spin polarization wi thout additional magnetic field. The dependence can be controlled by an ext ernal electric field, and may be significant for realistic models of double -barrier semiconductor heterostructures. [S0163-1829(99)02320-6].