Electrically active and inactive B lattice sites in ultrahighly B doped Si(001): An x-ray near-edge absorption fine-structure and high-resolution diffraction study
A. Vailionis et al., Electrically active and inactive B lattice sites in ultrahighly B doped Si(001): An x-ray near-edge absorption fine-structure and high-resolution diffraction study, PHYS REV L, 82(22), 1999, pp. 4464-4467
B lattice positions are determined as a function of B concentration C-B in
ultrahighly doped Si(001):B layers grown by gas-source molecular beam epita
xy from B2H6/Si2H6 For C-B less than or equal to 2.5 c 10(20) cm(-3), all B
atoms reside on tetrahedrally bonded electrically active substitutional Si
sites. At higher C-B, inactive B is incorporated as B pairs located on sin
gle Si sites and oriented primarily along in-plane [100] and [010] directio
ns. The B pairs are sp(2) bonded with trigonal coordination while substitut
ional single B atoms are sp(3). A surface reaction path leading to inactive
B incorporation is proposed. [S0031-9007(99)09265-0].