Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm

Authors
Zvonkov, NB Akhlestina, SA Ershov, AV Zvonkov, BN Maksimov, GA Uskova, EA
Citation
Nb. Zvonkov et al., Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm, QUANTUM EL, 29(3), 1999, pp. 217-218
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
QUANTUM ELECTRONICS
ISSN journal
10637818 → ACNP
Volume
29
Issue
3
Year of publication
1999
Pages
217 - 218
Database
ISI
SICI code
1063-7818(199903)29:3<217:SLWBTW>2.0.ZU;2-W
Abstract
InGaP/GaAs/InGaAs semiconductor lasers with broad tunnel-coupled waveguides were developed and investigated experimentally. Output radiation power of 5.2-5.8 W was obtained from an emitting region 100 mu m wide with a 36 degr ees divergence of the emitted radiation in a plane perpendicular to the p-n junction.