We have developed an instrument for optically measuring carrier dynamics in
thin-film materials with similar to 150 nm lateral resolution, similar to
250 fs temporal resolution, and high sensitivity. This is achieved by combi
ning ultrafast pump-probe laser spectroscopic techniques, which measure car
rier dynamics with femtosecond-scale temporal resolution, with the nanomete
r-scale lateral resolution of near-field scanning optical microscopes (NSOM
s). We employ a configuration in which carriers are excited by a far-field
pump laser pulse and locally measured by a probe pulse sent through a NSOM
tip and transmitted through the sample in the near field. A novel detection
system allows for either two-color or degenerate pump and probe photon ene
rgies, permitting greater measurement flexibility over earlier published wo
rk. The capabilities of this instrument are proven through near-field degen
erate pump-probe studies of carrier dynamics in GaAs/AlGaAs single quantum
well samples locally patterned by focused-ion-beam (FIB) implantation. We f
ind that lateral carrier diffusion across the nanometer-scale FIB pattern p
lays a significant role in the decay time of the excited carriers within si
milar to 1 mu m of the implanted stripes, an effect which could not have be
en resolved with a far-field system. (C) 1999 American Institute of Physics
. [S0034-6748(99)03106-8].