D'yakonov-Shur instability in a ballistic field-effect transistor with a spatially nonuniform channel

Citation
Mv. Cheremisin et Gg. Samsonidze, D'yakonov-Shur instability in a ballistic field-effect transistor with a spatially nonuniform channel, SEMICONDUCT, 33(5), 1999, pp. 578-585
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
5
Year of publication
1999
Pages
578 - 585
Database
ISI
SICI code
1063-7826(199905)33:5<578:DIIABF>2.0.ZU;2-3
Abstract
The instability of a two-dimensional electronic liquid in the channel of a ballistic field-effect transistor is analyzed by investigating the energy b alance. A criterion of instability is found for arbitrary boundary conditio ns. Using energy-balance analysis we propose a device with a high instabili ty growth rate. The transistor possesses a spatially nonuniform channel and is analogous to a divergent channel in classical hydrodynamics. Our comput ed growth rate and threshold of the instability for this device agree with the computational data. (C) 1999 American Institute of Physics. [S1063-7826 (99)02005-0].