Mv. Cheremisin et Gg. Samsonidze, D'yakonov-Shur instability in a ballistic field-effect transistor with a spatially nonuniform channel, SEMICONDUCT, 33(5), 1999, pp. 578-585
The instability of a two-dimensional electronic liquid in the channel of a
ballistic field-effect transistor is analyzed by investigating the energy b
alance. A criterion of instability is found for arbitrary boundary conditio
ns. Using energy-balance analysis we propose a device with a high instabili
ty growth rate. The transistor possesses a spatially nonuniform channel and
is analogous to a divergent channel in classical hydrodynamics. Our comput
ed growth rate and threshold of the instability for this device agree with
the computational data. (C) 1999 American Institute of Physics. [S1063-7826
(99)02005-0].