ELECTRIC RESISTIVITY OF THE SNO2-CUO SEMICONDUCTORS, INFLUENCE OF THESURFACE-STATE

Authors
GALASIU R GALASIU I POPA N CHIVU V BARBU A
Citation
R. Galasiu et al., ELECTRIC RESISTIVITY OF THE SNO2-CUO SEMICONDUCTORS, INFLUENCE OF THESURFACE-STATE, Revue Roumaine de Chimie, 41(11-12), 1996, pp. 905-911
Citations number
9
Categorie Soggetti
Chemistry
Journal title
Revue Roumaine de Chimie → ACNP
ISSN journal
00353930
Volume
41
Issue
11-12
Year of publication
1996
Pages
905 - 911
Database
ISI
SICI code
0035-3930(1996)41:11-12<905:EROTSS>2.0.ZU;2-J
Abstract
The electric resistivity of the SnO2 - CuO semiconductors having vario us CuO concentrations was measured. The electric resistivity of these ceramic masses was found to decrease with about two orders of magnitud e if the oxygen adsorbed on the surface is removed. Likewise, their el ectric resistivity decreases with the increase of the temperature and of the current density. The activation energy was calculated for the e lectric conductivity of the semiconductors which surface the oxygen ad sorbed was removed from.